JPH049378B2 - - Google Patents

Info

Publication number
JPH049378B2
JPH049378B2 JP56023017A JP2301781A JPH049378B2 JP H049378 B2 JPH049378 B2 JP H049378B2 JP 56023017 A JP56023017 A JP 56023017A JP 2301781 A JP2301781 A JP 2301781A JP H049378 B2 JPH049378 B2 JP H049378B2
Authority
JP
Japan
Prior art keywords
emitter
region
base
transistor
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56023017A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57138174A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP56023017A priority Critical patent/JPS57138174A/ja
Priority to IT19677/82A priority patent/IT1149658B/it
Priority to GB8204512A priority patent/GB2095471B/en
Priority to DE19823206060 priority patent/DE3206060A1/de
Priority to US06/350,873 priority patent/US4500900A/en
Publication of JPS57138174A publication Critical patent/JPS57138174A/ja
Priority to HK449/86A priority patent/HK44986A/xx
Priority to MY549/86A priority patent/MY8600549A/xx
Publication of JPH049378B2 publication Critical patent/JPH049378B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP56023017A 1981-02-20 1981-02-20 Semiconductor device Granted JPS57138174A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP56023017A JPS57138174A (en) 1981-02-20 1981-02-20 Semiconductor device
IT19677/82A IT1149658B (it) 1981-02-20 1982-02-16 Dispositivo a semiconduttori
GB8204512A GB2095471B (en) 1981-02-20 1982-02-16 Semiconductor device
DE19823206060 DE3206060A1 (de) 1981-02-20 1982-02-19 Halbleiteranordnung
US06/350,873 US4500900A (en) 1981-02-20 1982-02-22 Emitter ballast resistor configuration
HK449/86A HK44986A (en) 1981-02-20 1986-06-19 Semiconductor device
MY549/86A MY8600549A (en) 1981-02-20 1986-12-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56023017A JPS57138174A (en) 1981-02-20 1981-02-20 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57138174A JPS57138174A (en) 1982-08-26
JPH049378B2 true JPH049378B2 (en]) 1992-02-20

Family

ID=12098714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56023017A Granted JPS57138174A (en) 1981-02-20 1981-02-20 Semiconductor device

Country Status (7)

Country Link
US (1) US4500900A (en])
JP (1) JPS57138174A (en])
DE (1) DE3206060A1 (en])
GB (1) GB2095471B (en])
HK (1) HK44986A (en])
IT (1) IT1149658B (en])
MY (1) MY8600549A (en])

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1215230B (it) * 1985-01-08 1990-01-31 Ates Componenti Elettron Diretta. dispositivo a semiconduttore integrato con drastica riduzione dei fenomeni di rottura secondaria
US5298785A (en) * 1987-05-15 1994-03-29 Fuji Electric Co., Ltd. Semiconductor device
FR2615326B1 (fr) * 1987-05-15 1990-08-31 Fuji Electric Co Ltd Dispositif a semi-conducteurs du type multi-emetteur
DE3802821A1 (de) * 1988-01-30 1989-08-03 Bosch Gmbh Robert Leistungstransistor
US5374844A (en) * 1993-03-25 1994-12-20 Micrel, Inc. Bipolar transistor structure using ballast resistor
JP3253468B2 (ja) * 1994-12-05 2002-02-04 シャープ株式会社 半導体装置
SE521385C2 (sv) * 1997-04-04 2003-10-28 Ericsson Telefon Ab L M Bipolär transistorstruktur
JP2006332117A (ja) * 2005-05-23 2006-12-07 Sharp Corp トランジスタ構造および電子機器
US8008747B2 (en) 2008-02-28 2011-08-30 Alpha & Omega Semiconductor, Ltd. High power and high temperature semiconductor power devices protected by non-uniform ballasted sources
US8946942B2 (en) * 2008-03-03 2015-02-03 Alpha And Omega Semiconductor Incorporated Robust semiconductor power devices with design to protect transistor cells with slower switching speed
US8563387B2 (en) 2010-09-22 2013-10-22 Infineon Technologies Ag Transistor and method of manufacturing a transistor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device
US3971060A (en) * 1974-07-12 1976-07-20 Texas Instruments Incorporated TTL coupling transistor
US3988759A (en) * 1974-08-26 1976-10-26 Rca Corporation Thermally balanced PN junction
JPS5619417Y2 (en]) * 1976-03-19 1981-05-08
JPS5457963U (en]) * 1977-09-29 1979-04-21
DE3017750C2 (de) * 1980-05-09 1985-03-07 Philips Patentverwaltung Gmbh, 2000 Hamburg Halbleiterbauelement vom Planar-Epitaxial-Typ mit mindestens einem bipolaren Leistungstransistor

Also Published As

Publication number Publication date
GB2095471A (en) 1982-09-29
US4500900A (en) 1985-02-19
GB2095471B (en) 1985-08-21
MY8600549A (en) 1986-12-31
JPS57138174A (en) 1982-08-26
HK44986A (en) 1986-06-27
IT1149658B (it) 1986-12-03
DE3206060A1 (de) 1982-09-09
IT8219677A0 (it) 1982-02-16

Similar Documents

Publication Publication Date Title
JPH04146674A (ja) 半導体装置及びその製造方法
JPH01125979A (ja) 絶縁ゲート型バイポーラトランジスタ
JPH0347593B2 (en])
KR100208632B1 (ko) 반도체 집적 회로 및 그 제조 방법
JPH0324791B2 (en])
US4639757A (en) Power transistor structure having an emitter ballast resistance
JPH049378B2 (en])
JP2950025B2 (ja) 絶縁ゲート型バイポーラトランジスタ
JPS63311766A (ja) Ｍｉｓパワートランジスタ
JP3114317B2 (ja) 半導体装置
JP2000040788A (ja) 半導体装置
JP4029549B2 (ja) 半導体装置
JPH104192A (ja) 半導体素子のボディ・コンタクト構造
JPS6211787B2 (en])
JPS62177968A (ja) ゲ−トタ−ンオフサイリスタ
JPS6327865B2 (en])
JP3128958B2 (ja) 半導体集積回路
KR930005948B1 (ko) 래터럴형 반도체장치
JPS6359262B2 (en])
JPS6258678A (ja) トランジスタ
JPS6331110B2 (en])
JPS6223466B2 (en])
JPS6128224B2 (en])
JPS62143465A (ja) 半導体装置
JPH05326946A (ja) 横型ｍｏｓ電界効果トランジスタ